| PART |
Description |
Maker |
| GLML3C1-50 |
Green Diode Pumped Laser Module
|
Roithner LaserTechnik G...
|
| RLTMGL-532 |
Green Diode Pumped Solid State Laser
|
Roithner LaserTechnik G...
|
| RLCA532-5-3 |
Green Cross Line Diode Pumped Laser Module
|
Roithner LaserTechnik G...
|
| CW532-020L |
Green Diode Pumped Solid State Laser Module
|
Roithner LaserTechnik G...
|
| RLTMGL-593 |
Yellow Diode Pumped Solid State Laser
|
Roithner LaserTechnik G...
|
| CDPS532S020 CDPS532S010 |
Continuous Wave 532 nm Diode-Pumped Solid State Laser
|
JDS Uniphase Corporation
|
| RLTCO-1064-200W |
High Power Infrared Diode Pumped Solid State Laser
|
Roithner LaserTechnik G...
|
| 890-000-K0200-6000-00 901-000-00200-6000-00 801-00 |
MODUL ANZEIGE 18X24MM T5.5
MODUL SCHALTER 1P T1 3/4
MODUL SCHALTER 1P T5.5
MODUL ANZEIGE 18X18MM T5.5
MODUL ANZEIGE 18X24MM T1 3/4
1.5A Dual MOSFET Drvr, td Match, 0C to 70C, 8-SOIC 150mil, T/R
MODUL ANZEIGE 18X18MM T1 3/4
MODUL SCHALTER 18X18MM SPDT T5.5
MODUL SCHALTER 18X18MM DPDT T1 3/4 模件SCHALTER 18X18MM双刀双掷T1 3 / 4
MODUL SCHALTER 18X18MM SPDT T1 3/4 模件SCHALTER 18X18MM单刀双掷T1 3 / 4
|
EAO International
TE Connectivity, Ltd.
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
